All Transistors. MUN5111DW1T1G Datasheet

 

MUN5111DW1T1G Datasheet and Replacement


   Type Designator: MUN5111DW1T1G
   SMD Transistor Code: 0A
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.187 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: SOT-363
 

 MUN5111DW1T1G Substitution

   - BJT ⓘ Cross-Reference Search

   

MUN5111DW1T1G Datasheet (PDF)

 ..1. Size:198K  onsemi
mun5111dw1t1g mun5112dw1t1g mun5113dw1t1g mun5114dw1t1g mun5115dw1t1g mun5116dw1t1g mun5130dw1t1g mun5131dw1t1g.pdf pdf_icon

MUN5111DW1T1G

MUN5111DW1T1G Series,SMUN5111DW1T1G SeriesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor with amonolithic bias network consisting of two resistors; a series base resistorand a base-emitter resistor. These digital transistors are designed to

 0.1. Size:918K  lrc
lmun5111dw1t1g lmun5112dw1t1g lmun5113dw1t1g lmun5114dw1t1g lmun5115dw1t1g lmun5116dw1t1g lmun5130dw1t1g lmun5131dw1t1g lmun5132dw1t1g.pdf pdf_icon

MUN5111DW1T1G

LESHAN RADIO COMPANY, LTD.Dual Bias Resistor TransistorsPNP Silicon Surface Mount TransistorsLMUN5111DW1T1GSerieswith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1Gnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. TheseSeriesdigital transistors are

 2.1. Size:226K  onsemi
mun5111dw1t1-d.pdf pdf_icon

MUN5111DW1T1G

MUN5111DW1T1G SeriesPreferred DevicesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor with ahttp://onsemi.commonolithic bias network consisting of two resistors; a series base resistorand a base-emitter resistor. These digital transistors are designed to(3) (

 3.1. Size:89K  onsemi
nsvmun5111dw1t3g.pdf pdf_icon

MUN5111DW1T1G

MUN5111DW1,NSBA114EDXV6,NSBA114EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

Datasheet: MUN2236 , MUN2236T1G , MUN2237T1G , MUN2238 , MUN2238T1G , MUN2240T1G , MUN2241 , MUN2241T1G , TIP122 , MUN5111T1G , MUN5112DW1 , MUN5112DW1T1G , MUN5112T1G , MUN5113DW1T1G , MUN5113T1G , MUN5114DW1T1G , MUN5114T1G .

History: 2SC1168 | 2SD2383 | 2SD1416

Keywords - MUN5111DW1T1G transistor datasheet

 MUN5111DW1T1G cross reference
 MUN5111DW1T1G equivalent finder
 MUN5111DW1T1G lookup
 MUN5111DW1T1G substitution
 MUN5111DW1T1G replacement

 

 
Back to Top

 


 
.