MUN5130DW1T1G Todos los transistores

 

MUN5130DW1T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MUN5130DW1T1G
   Código: 0G
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 1 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.187 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 3
   Paquete / Cubierta: SOT-363
 

 Búsqueda de reemplazo de MUN5130DW1T1G

   - Selección ⓘ de transistores por parámetros

 

MUN5130DW1T1G Datasheet (PDF)

 ..1. Size:198K  onsemi
mun5111dw1t1g mun5112dw1t1g mun5113dw1t1g mun5114dw1t1g mun5115dw1t1g mun5116dw1t1g mun5130dw1t1g mun5131dw1t1g.pdf pdf_icon

MUN5130DW1T1G

MUN5111DW1T1G Series,SMUN5111DW1T1G SeriesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor with amonolithic bias network consisting of two resistors; a series base resistorand a base-emitter resistor. These digital transistors are designed to

 0.1. Size:918K  lrc
lmun5111dw1t1g lmun5112dw1t1g lmun5113dw1t1g lmun5114dw1t1g lmun5115dw1t1g lmun5116dw1t1g lmun5130dw1t1g lmun5131dw1t1g lmun5132dw1t1g.pdf pdf_icon

MUN5130DW1T1G

LESHAN RADIO COMPANY, LTD.Dual Bias Resistor TransistorsPNP Silicon Surface Mount TransistorsLMUN5111DW1T1GSerieswith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1Gnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. TheseSeriesdigital transistors are

 4.1. Size:64K  onsemi
mun5130dw1.pdf pdf_icon

MUN5130DW1T1G

MUN5130DW1,NSBA113EDXV6Dual PNP Bias ResistorTransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network This series of digital transistors is designed to replace a single(3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasR

 7.1. Size:450K  onsemi
mun2130 mmun2130l mun5130 dta113ee dta113em3 nsba113ef3.pdf pdf_icon

MUN5130DW1T1G

MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)

Otros transistores... MUN5113T1G , MUN5114DW1T1G , MUN5114T1G , MUN5115DW1T1G , MUN5115T1G , MUN5116DW1T1G , MUN5116T1G , MUN5130DW1 , A940 , MUN5130T1G , MUN5131DW1 , MUN5131DW1T1G , MUN5131T1G , MUN5132DW1 , MUN5132DW1T1G , MUN5132T1G , MUN5133DW1T1G .

 

 
Back to Top

 


 
.