MUN5130DW1T1G - аналоги и даташиты биполярного транзистора

 

MUN5130DW1T1G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: MUN5130DW1T1G
   Маркировка: 0G
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 1 kOhm
   Встроенный резистор цепи смещения R2 = 1 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.187 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 3
   Корпус транзистора: SOT-363

 Аналоги (замена) для MUN5130DW1T1G

 

MUN5130DW1T1G Datasheet (PDF)

 ..1. Size:198K  onsemi
mun5111dw1t1g mun5112dw1t1g mun5113dw1t1g mun5114dw1t1g mun5115dw1t1g mun5116dw1t1g mun5130dw1t1g mun5131dw1t1g.pdfpdf_icon

MUN5130DW1T1G

MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to

 0.1. Size:918K  lrc
lmun5111dw1t1g lmun5112dw1t1g lmun5113dw1t1g lmun5114dw1t1g lmun5115dw1t1g lmun5116dw1t1g lmun5130dw1t1g lmun5131dw1t1g lmun5132dw1t1g.pdfpdf_icon

MUN5130DW1T1G

LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors LMUN5111DW1T1G Series with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1G network consisting of two resistors; a series base resistor and a base emitter resistor. These Series digital transistors are

 4.1. Size:64K  onsemi
mun5130dw1.pdfpdf_icon

MUN5130DW1T1G

MUN5130DW1, NSBA113EDXV6 Dual PNP Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias R

 7.1. Size:450K  onsemi
mun2130 mmun2130l mun5130 dta113ee dta113em3 nsba113ef3.pdfpdf_icon

MUN5130DW1T1G

MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

Другие транзисторы... MUN5113T1G , MUN5114DW1T1G , MUN5114T1G , MUN5115DW1T1G , MUN5115T1G , MUN5116DW1T1G , MUN5116T1G , MUN5130DW1 , S8550 , MUN5130T1G , MUN5131DW1 , MUN5131DW1T1G , MUN5131T1G , MUN5132DW1 , MUN5132DW1T1G , MUN5132T1G , MUN5133DW1T1G .

History: MMBT489LT1G | MMBT4403GH

 

 
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