MUN5130T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MUN5130T1G  📄📄 

Código: 6G

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 1 kOhm

Resistencia Base-Emisor R2 = 1 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.202 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 3

Encapsulados: SOT-323

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MUN5130T1G datasheet

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MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

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MUN5130DW1, NSBA113EDXV6 Dual PNP Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias R

MOSTRAR MÁS

Otros transistores... MUN5114DW1T1G, MUN5114T1G, MUN5115DW1T1G, MUN5115T1G, MUN5116DW1T1G, MUN5116T1G, MUN5130DW1, MUN5130DW1T1G, 2SC4793, MUN5131DW1, MUN5131DW1T1G, MUN5131T1G, MUN5132DW1, MUN5132DW1T1G, MUN5132T1G, MUN5133DW1T1G, MUN5133T1G