Биполярный транзистор MUN5130T1G Даташит. Аналоги
Наименование производителя: MUN5130T1G
Маркировка: 6G
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 1 kOhm
Встроенный резистор цепи смещения R2 = 1 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.202 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 3
Корпус транзистора: SOT-323
Аналог (замена) для MUN5130T1G
MUN5130T1G Datasheet (PDF)
mun5111t1g mun5112t1g mun5113t1g mun5114t1g mun5115t1g mun5116t1g mun5130t1g mun5131t1g mun5132t1g mun5133t1g mun5134t1g mun5135t1g mun5136t1g mun5137t1g.pdf

MUN5111T1G Series,SMUN5111T1G,NSVMUN5111T1G SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkPNP SILICONThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorBIAS RESISTORTransistor (BRT) contains a single transistor with a
lmun5111t1g lmun5112t1g lmun5113t1g lmun5114t1g lmun5115t1g lmun5116t1g lmun5130t1g lmun5131t1g lmun5132t1g lmun5133t1g lmun5134t1g lmun5135t1g lmun5136t1g lmun5137t1g.pdf

mun2130 mmun2130l mun5130 dta113ee dta113em3 nsba113ef3.pdf

MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)
mun5130dw1.pdf

MUN5130DW1,NSBA113EDXV6Dual PNP Bias ResistorTransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network This series of digital transistors is designed to replace a single(3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasR
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: NA12HJ | MUN5233DW1 | NA02EG
History: NA12HJ | MUN5233DW1 | NA02EG



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