MUN5137DW1T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MUN5137DW1T1G
   Código: 0P
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.187 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT-363

Búsqueda de reemplazo de transistor bipolar MUN5137DW1T1G

MUN5137DW1T1G Datasheet (PDF)

0.1. Size:132K onsemi
nsvmun5137dw1t1g.pdf

MUN5137DW1,NSBA144WDXV6,NSBA144WDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 22 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

4.1. Size:290K onsemi
mun5137dw1 nsba144wdxv6 nsba144wdp6.pdf

MUN5137DW1,NSBA144WDXV6,NSBA144WDP6Dual PNP Bias ResistorTransistorswww.onsemi.comR1 = 47 kW, R2 = 22 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a

4.2. Size:118K onsemi
mun5137dw1.pdf