MUN5313DW1T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MUN5313DW1T1G 📄📄
Código: 13
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.187 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 80
Encapsulados: SOT-363
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MUN5313DW1T1G datasheet
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Otros transistores... MUN5238, MUN5238T1G, MUN5240, MUN5240T1G, MUN5241, MUN5241T1G, MUN5311DW1T1G, MUN5312DW1T1G, BD139, MUN5314DW1T1G, MUN5315DW1T1G, MUN5316DW1T1G, MUN5330DW1T1G, MUN5331DW1, MUN5331DW1T1G, MUN5332DW1T1G, MUN5333DW1T1G
Parámetros del transistor bipolar y su interrelación.
History: 2N3725A | BFW40A | RN2424 | NB014F | 2SB1412-R | 3CG608K | NB212EI
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