All Transistors. MUN5313DW1T1G Datasheet

 

MUN5313DW1T1G Datasheet and Replacement


   Type Designator: MUN5313DW1T1G
   SMD Transistor Code: 13
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.187 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-363
      - BJT Cross-Reference Search

   

MUN5313DW1T1G Datasheet (PDF)

 ..1. Size:276K  onsemi
mun5311dw1t1g mun5312dw1t1g mun5313dw1t1g mun5314dw1t1g mun5315dw1t1g mun5316dw1t1g mun5330dw1t1g mun5331dw1t1g mun5332dw1t1g mun5333dw1t1g mun5334dw1t1g mun5335dw1t1g.pdf pdf_icon

MUN5313DW1T1G

MUN5311DW1T1G,SMUN5311DW1T1G,NSVMUN5311DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comhttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor NetworkSOT-363CASE 419BThe Bias Resistor Transistor (BRT) contains a single transistor withSTYLE 1a monolithic bias network consisting of two resistors; a series baseresistor and

 8.1. Size:308K  motorola
mun5311dw1t1rev5.pdf pdf_icon

MUN5313DW1T1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5311DW1T1/DMUN5311DW1T1Dual Bias Resistor TransistorsSERIESNPN and PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkMotorola Preferred DevicesThe BRT (Bias Resistor Transistor) contains a single transistor with amonolithic bias network consisting of two resistors; a series base resistor a

 8.2. Size:308K  motorola
mun5311d.pdf pdf_icon

MUN5313DW1T1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5311DW1T1/DMUN5311DW1T1Dual Bias Resistor TransistorsSERIESNPN and PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkMotorola Preferred DevicesThe BRT (Bias Resistor Transistor) contains a single transistor with amonolithic bias network consisting of two resistors; a series base resistor a

 8.3. Size:89K  onsemi
mun5311dw1t2g.pdf pdf_icon

MUN5313DW1T1G

MUN5311DW1,NSBC114EPDXV6,NSBC114EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ECG332 | 2N2904 | DTC124EEB | ECG185 | 2N5784 | 2SA1488 | NXP3875G

Keywords - MUN5313DW1T1G transistor datasheet

 MUN5313DW1T1G cross reference
 MUN5313DW1T1G equivalent finder
 MUN5313DW1T1G lookup
 MUN5313DW1T1G substitution
 MUN5313DW1T1G replacement

 

 
Back to Top

 


 
.