RT1N150C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1N150C
Código: NS
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 100 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC-59
Búsqueda de reemplazo de transistor bipolar RT1N150C
RT1N150C Datasheet (PDF)
rt1n150c rt1n150m rt1n150s rt1n150u.pdf
TransistorRT1N150X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N150X is a one chip transistor RT1N150C with built-in bias resistor,PNP type is RT1P150X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=100k). APPLICATION Inverted circuit,switching circ
rt1n151c rt1n151m rt1n151s rt1n151u.pdf
TransistorRT1N151X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N151X is a one chip transistor RT1N151C with built-in bias resistor,PNP type is RT1P151X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=100k,R2=100k). APPLICATION Inverted circuit,swit
rt1n15bc rt1n15bm rt1n15bs rt1n15bu.pdf
TransistorRT1N15BX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N15BX is one chip transistor RT1N15BC With built-in bias resistor, PNP type is RT1P15BX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R2=100k). APPLICATION Inverted circuit, switching circ
rt1n140c rt1n140m rt1n140s rt1n140u.pdf
TransistorRT1N140X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N140X is a one chip transistor RT1N140C with built-in bias resistor, PNP type is RT1P140X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k) APPLICATION Inverted circuit, switching circ
rt1n14bc rt1n14bm rt1n14bs rt1n14bu.pdf
TransistorRT1N14BX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N14BX is one chip transistor RT1N14BC with built-in bias resistor, PNP type is RT1P14BX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R2=10k). APPLICATION . Inverted circuit,switching circ
rt1n137p.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
rt1n141c rt1n141m rt1n141s rt1n141u.pdf
TransistorRT1N141X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N141X is a one chip transistor RT1N141C with built-in bias resistor,PNP type is RT1P141X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=10k). APPLICATION Inverted circuit,switch
rt1n136c rt1n136m rt1n136s rt1n136u.pdf
TransistorRT1N136X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N136X is a one chip transistor RT1N136C with built-in bias resistor,PNP type is RT1P136X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k,R2=10k). APPLICATION Inverted circuit,switchi
rt1n14hc rt1n14hm rt1n14hs rt1n14hu.pdf
TransistorRT1N14HX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N14HX is one chip transistor RT1N14HC with built-in bias resistor, PNP type is RT1P14HX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=4.7k). APPLICATION Inverted circuit,switch
rt1n137s.pdf
RT1N137S Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 4.0 RT1N137S is a one chip transistor with built-in bias resistor, NPN type is RT1P137S. FEATURE 0.1 Built-in bias resistor R =1k, R =22k 1 2High collector current Ic=1A 0.45 Low VCE(sat) VCE(sat)=0.3V (@Ic=300mA/IB=3mA) 2.5
rt1n144c rt1n144m rt1n144s rt1n144u.pdf
TransistorRT1N144X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N144X is a one chip transistor RT1N144C with built-in bias resistor,PNP type is RT1P144X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=47k). APPLICATION Inverted circuit,switch
rt1n130c rt1n130m rt1n130s rt1n130u.pdf
TransistorRT1N130X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N130X is a one chip transistor RT1N130C with built-in bias resistor,PNP type is RT1P130X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k). APPLICATION Inverted circuit,switching circui
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KT723A | KSD560O
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050