Биполярный транзистор RT1N150C - описание производителя. Основные параметры. Даташиты.
Наименование производителя: RT1N150C
Маркировка: NS
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 100 kOhm
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SC-59
RT1N150C Datasheet (PDF)
rt1n150c rt1n150m rt1n150s rt1n150u.pdf
TransistorRT1N150X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N150X is a one chip transistor RT1N150C with built-in bias resistor,PNP type is RT1P150X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=100k). APPLICATION Inverted circuit,switching circ
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rt1n137p.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
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TransistorRT1N141X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N141X is a one chip transistor RT1N141C with built-in bias resistor,PNP type is RT1P141X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=10k). APPLICATION Inverted circuit,switch
rt1n136c rt1n136m rt1n136s rt1n136u.pdf
TransistorRT1N136X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N136X is a one chip transistor RT1N136C with built-in bias resistor,PNP type is RT1P136X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k,R2=10k). APPLICATION Inverted circuit,switchi
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TransistorRT1N14HX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N14HX is one chip transistor RT1N14HC with built-in bias resistor, PNP type is RT1P14HX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=4.7k). APPLICATION Inverted circuit,switch
rt1n137s.pdf
RT1N137S Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 4.0 RT1N137S is a one chip transistor with built-in bias resistor, NPN type is RT1P137S. FEATURE 0.1 Built-in bias resistor R =1k, R =22k 1 2High collector current Ic=1A 0.45 Low VCE(sat) VCE(sat)=0.3V (@Ic=300mA/IB=3mA) 2.5
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TransistorRT1N144X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N144X is a one chip transistor RT1N144C with built-in bias resistor,PNP type is RT1P144X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=47k). APPLICATION Inverted circuit,switch
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TransistorRT1N130X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N130X is a one chip transistor RT1N130C with built-in bias resistor,PNP type is RT1P130X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k). APPLICATION Inverted circuit,switching circui
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Список транзисторов
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