RT1N150C Datasheet, Equivalent, Cross Reference Search
Type Designator: RT1N150C
SMD Transistor Code: NS
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 100 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-59
RT1N150C Transistor Equivalent Substitute - Cross-Reference Search
RT1N150C Datasheet (PDF)
rt1n150c rt1n150m rt1n150s rt1n150u.pdf
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ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
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TransistorRT1N141X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N141X is a one chip transistor RT1N141C with built-in bias resistor,PNP type is RT1P141X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=10k). APPLICATION Inverted circuit,switch
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TransistorRT1N136X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N136X is a one chip transistor RT1N136C with built-in bias resistor,PNP type is RT1P136X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k,R2=10k). APPLICATION Inverted circuit,switchi
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TransistorRT1N14HX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N14HX is one chip transistor RT1N14HC with built-in bias resistor, PNP type is RT1P14HX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=4.7k). APPLICATION Inverted circuit,switch
rt1n137s.pdf
RT1N137S Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 4.0 RT1N137S is a one chip transistor with built-in bias resistor, NPN type is RT1P137S. FEATURE 0.1 Built-in bias resistor R =1k, R =22k 1 2High collector current Ic=1A 0.45 Low VCE(sat) VCE(sat)=0.3V (@Ic=300mA/IB=3mA) 2.5
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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N383