RT1N250S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RT1N250S

Código: N250

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 200 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.45 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO92S

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RT1N250S datasheet

 ..1. Size:125K  isahaya
rt1n250c rt1n250m rt1n250s rt1n250u.pdf pdf_icon

RT1N250S

Transistor RT1N250X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N250X is a one chip transistor RT1N250C with built-in bias resistor,PNP type is RT1P250X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=200k ). APPLICATION Inverted circuit,switching circ

 9.1. Size:126K  isahaya
rt1n230c rt1n230m rt1n230s rt1n230u.pdf pdf_icon

RT1N250S

Transistor RT1N230X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N230X is a one chip transistor RT1N230C with built-in bias resistor, PNP type is RT1P230X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ) APPLICATION Inverted circuit, switching cir

 9.2. Size:129K  isahaya
rt1n242c rt1n242m rt1n242s rt1n242u.pdf pdf_icon

RT1N250S

Transistor RT1N242X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N242X is a one chip transistor RT1N242C with built-in bias resistor,PNP type is RT1P242X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=22k ,R2=47k ). APPLICATION Inverted circuit,switchin

 9.3. Size:127K  isahaya
rt1n231c rt1n231m rt1n231s rt1n231u.pdf pdf_icon

RT1N250S

Transistor RT1N231X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N231X is a one chip transistor RT1N231C with built-in bias resistor,PNP type is RT1P231X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=2.2k ). APPLICATION Inverted circuit,swit

Otros transistores... RT1N242S, RT1N242U, RT1N24BC, RT1N24BM, RT1N24BS, RT1N24BU, RT1N250C, RT1N250M, 13005, RT1N250U, RT1N430C, RT1N430M, RT1N430S, RT1N430U, RT1N431C, RT1N431M, RT1N431S