Справочник транзисторов. RT1N250S

 

Биполярный транзистор RT1N250S Даташит. Аналоги


   Наименование производителя: RT1N250S
   Маркировка: N250
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 200 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.45 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: TO92S
     - подбор биполярного транзистора по параметрам

 

RT1N250S Datasheet (PDF)

 ..1. Size:125K  isahaya
rt1n250c rt1n250m rt1n250s rt1n250u.pdfpdf_icon

RT1N250S

TransistorRT1N250X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N250X is a one chip transistor RT1N250C with built-in bias resistor,PNP type is RT1P250X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=200k). APPLICATION Inverted circuit,switching circ

 9.1. Size:126K  isahaya
rt1n230c rt1n230m rt1n230s rt1n230u.pdfpdf_icon

RT1N250S

TransistorRT1N230X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N230X is a one chip transistor RT1N230C with built-in bias resistor, PNP type is RT1P230X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k) APPLICATION Inverted circuit, switching cir

 9.2. Size:129K  isahaya
rt1n242c rt1n242m rt1n242s rt1n242u.pdfpdf_icon

RT1N250S

TransistorRT1N242X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N242X is a one chip transistor RT1N242C with built-in bias resistor,PNP type is RT1P242X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k,R2=47k). APPLICATION Inverted circuit,switchin

 9.3. Size:127K  isahaya
rt1n231c rt1n231m rt1n231s rt1n231u.pdfpdf_icon

RT1N250S

TransistorRT1N231X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N231X is a one chip transistor RT1N231C with built-in bias resistor,PNP type is RT1P231X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=2.2k). APPLICATION Inverted circuit,swit

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3DD4540_A3 | SE8542 | GI3702 | 2SC3747R | KTA1271A | L8050PLT3G | CV7764

 

 
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