RT1N250S Datasheet. Specs and Replacement
Type Designator: RT1N250S
SMD Transistor Code: N250
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 200 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92S
RT1N250S Substitution
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RT1N250S datasheet
rt1n250c rt1n250m rt1n250s rt1n250u.pdf ![]()
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Transistor RT1N230X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N230X is a one chip transistor RT1N230C with built-in bias resistor, PNP type is RT1P230X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ) APPLICATION Inverted circuit, switching cir... See More ⇒
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Transistor RT1N242X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N242X is a one chip transistor RT1N242C with built-in bias resistor,PNP type is RT1P242X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=22k ,R2=47k ). APPLICATION Inverted circuit,switchin... See More ⇒
rt1n231c rt1n231m rt1n231s rt1n231u.pdf ![]()
Transistor RT1N231X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N231X is a one chip transistor RT1N231C with built-in bias resistor,PNP type is RT1P231X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=2.2k ). APPLICATION Inverted circuit,swit... See More ⇒
Detailed specifications: RT1N242S, RT1N242U, RT1N24BC, RT1N24BM, RT1N24BS, RT1N24BU, RT1N250C, RT1N250M, 13005, RT1N250U, RT1N430C, RT1N430M, RT1N430S, RT1N430U, RT1N431C, RT1N431M, RT1N431S
Keywords - RT1N250S pdf specs
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