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2SA1105 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1105
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 90 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 9 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Capacitancia de salida (Cc): 300 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO218
 

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2SA1105 Datasheet (PDF)

 ..1. Size:48K  wingshing
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2SA1105

2SA1105 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2577 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -9

 ..2. Size:149K  jmnic
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2SA1105

JMnic Product SpecificationSilicon PNP Power Transistors 2SA1105 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=

 ..3. Size:223K  inchange semiconductor
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2SA1105

isc Silicon PNP Power Transistor 2SA1105DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co

 8.1. Size:79K  wingshing
2sa1104.pdf pdf_icon

2SA1105

Silicon Epitaxial Planar Transistor2SA1104GENERAL DESCRIPTION Silicon PNP high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeMT-100QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 120 VCollector-emitter voltage (open base)VCEO - 120 VCollector curren

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BC508B

 

 
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