UMD12N
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMD12N
Código: D12
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta:
SOT-353
Búsqueda de reemplazo de transistor bipolar UMD12N
UMD12N
Datasheet (PDF)
..1. Size:535K rohm
emd12 umd12n.pdf 
EMD12 / UMD12NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) (4) (4) VCC50V(1) (1) (2) IC(MAX.)100mA (2) (3) (3) R147kWEMD12 UMD12N (SC-107C) R2 SOT-353 (SC-88) 47kWParameter ValueVCC-50VIC(MAX.)-100mAR1
..2. Size:70K rohm
emd12 umd12n.pdf
EMD12 / UMD12N Transistors Power management (dual digital transistors) EMD12 / UMD12N Features EMD121) Both the DTA144E and DTC144E in a EMT or UMT ( ) ( )4 3package. ( ) ( )5 2( ) ( )6 11.21.6 Equivalent circuit (3) (2) (1)ROHM : EMT6 Each lead has same dimensionsR1 R2DTr1DTr2 UMD12NR2R1(4) (5) (6)R1=47kR2=47k 1.252.1 Package,
0.1. Size:1339K rohm
emd12fha umd12nfha.pdf
EMD12FHA / UMD12NFHAEMD12 / UMD12NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6)(6) (5) (5) (4) (4)VCC50V(1)(1) (2)IC(MAX.)100mA (2) (3) (3)R147kWEMD12FHA UMD12NFHAEMD12UMD12N(SC-107C)R2 SOT-353 (SC-88)47kWPara
9.1. Size:66K philips
pumd12 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageMBD128PUMD12NPN/PNP resistor-equippedtransistor1999 Apr 26Product specificationPhilips Semiconductors Product specificationNPN/PNP resistor-equipped transistor PUMD12FEATURES6 5 4handbook, halfpage Transistors with different polarityand built-in bias resistors6 5 4R1 and R2 (typ. 47 k each) R1 R2TR2 N
9.2. Size:140K philips
pemd12 pumd12.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMD12; PUMD12NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 kProduct data sheet 2003 Oct 08Supersedes data of 2001 Nov 7NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD12; PUMD12R1 = 47 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UN
9.3. Size:120K chenmko
chumd12gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHUMD12GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation curr
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