UMD12N Specs and Replacement
Type Designator: UMD12N
SMD Transistor Code: D12
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Package: SOT-353
UMD12N Substitution
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UMD12N datasheet
EMD12 / UMD12N Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Value (6) (6) (5) (5) (4) (4) VCC 50V (1) (1) (2) IC(MAX.) 100mA (2) (3) (3) R1 47kW EMD12 UMD12N (SC-107C) R2 SOT-353 (SC-88) 47kW Parameter Value VCC -50V IC(MAX.) -100mA R1 ... See More ⇒
EMD12 / UMD12N Transistors Power management (dual digital transistors) EMD12 / UMD12N Features EMD12 1) Both the DTA144E and DTC144E in a EMT or UMT ( ) ( ) 4 3 package. ( ) ( ) 5 2 ( ) ( ) 6 1 1.2 1.6 Equivalent circuit (3) (2) (1) ROHM EMT6 Each lead has same dimensions R1 R2 DTr1 DTr2 UMD12N R2 R1 (4) (5) (6) R1=47k R2=47k 1.25 2.1 Package, ... See More ⇒
EMD12FHA / UMD12NFHA EMD12 / UMD12N Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Value (6) (6) (5) (5) (4) (4) VCC 50V (1) (1) (2) IC(MAX.) 100mA (2) (3) (3) R1 47kW EMD12FHA UMD12NFHA EMD12 UMD12N (SC-107C) R2 SOT-353 (SC-88) 47kW Para... See More ⇒
Detailed specifications: UMB11NFHA, UMB2NFHA, UMB3NFHA, UMB4NFHA, UMB6NFHA, UMC2NT1G, UMC3NT1G, UMC5NT1G, A42, UMD12NFHA, UMD22N, UMD22NFHA, UMD2NFHA, UMD3NFHA, UMD4N, UMD5N, UMD6NFHA
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