EMD12 / UMD12NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) (4) (4) VCC50V(1) (1) (2) IC(MAX.)100mA (2) (3) (3) R147kWEMD12 UMD12N (SC-107C) R2 SOT-353 (SC-88) 47kWParameter ValueVCC-50VIC(MAX.)-100mAR1

EMD12 / UMD12N Transistors Power management (dual digital transistors) EMD12 / UMD12N Features EMD121) Both the DTA144E and DTC144E in a EMT or UMT ( ) ( )4 3package. ( ) ( )5 2( ) ( )6 11.21.6 Equivalent circuit (3) (2) (1)ROHM : EMT6 Each lead has same dimensionsR1 R2DTr1DTr2 UMD12NR2R1(4) (5) (6)R1=47kR2=47k 1.252.1 Package,

(94S-815-AC143T

EMD12FHA / UMD12NFHAEMD12 / UMD12NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6)(6) (5) (5) (4) (4)VCC50V(1)(1) (2)IC(MAX.)100mA (2) (3) (3)R147kWEMD12FHA UMD12NFHAEMD12UMD12N(SC-107C)R2 SOT-353 (SC-88)47kWPara

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageMBD128PUMD12NPN/PNP resistor-equippedtransistor1999 Apr 26Product specificationPhilips Semiconductors Product specificationNPN/PNP resistor-equipped transistor PUMD12FEATURES6 5 4handbook, halfpage Transistors with different polarityand built-in bias resistors6 5 4R1 and R2 (typ. 47 k each) R1 R2TR2 N

DISCRETE SEMICONDUCTORS DATA SHEETPEMD12; PUMD12NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 kProduct data sheet 2003 Oct 08Supersedes data of 2001 Nov 7NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD12; PUMD12R1 = 47 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UN

CHENMKO ENTERPRISE CO.,LTDCHUMD12GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation curr