UMH10NFHA Todos los transistores

 

UMH10NFHA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UMH10NFHA
   Código: H10
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SC-88
 

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UMH10NFHA Datasheet (PDF)

 ..1. Size:1017K  rohm
 emh10fha umh10nfha.pdf pdf_icon

UMH10NFHA

AEC-Q101 QualifiedGeneral purpose (dual digital transistors) EMH10 / UMH10N EMH10FHA / UMH10NFHAStructure Dimensions (Unit : mm)Epitaxial planar type NPN silicon transistor EMH10FHAEMH10(Built-in resistor type)(4) (3)(5) (2)(6) (1)Features1.21.61) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machi

 8.1. Size:61K  rohm
 umh10n imh10a h10 sot23-6 sot363.pdf pdf_icon

UMH10NFHA

TransistorsGeneral purpose(dual digital transistors)UMH10N / IMH10AFFeatures FExternal dimensions (Units: mm)1) Two DTC123J chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN

 8.2. Size:61K  rohm
 umh10n.pdf pdf_icon

UMH10NFHA

TransistorsGeneral purpose(dual digital transistors)UMH10N / IMH10AFFeatures FExternal dimensions (Units: mm)1) Two DTC123J chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN

 8.3. Size:291K  htsemi
 umh10n.pdf pdf_icon

UMH10NFHA

UMH10N General purpose transistors (dual transistors)SOT-363 FEATURES Two DTC123J chips in a package 1 Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. Marking: H10 Equivalent circuit Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitSupp

MOSTRAR MÁS

Otros transistores... UMD22N , UMD22NFHA , UMD2NFHA , UMD3NFHA , UMD4N , UMD5N , UMD6NFHA , UMD9NFHA , C1815 , UMH11NFHA , UMH14N , UMH14NFHA , UMH1NFHA , UMH2NFHA , UMH32N , UMH33N , UMH3NFHA .

History: UN6116Q | BFQ82 | 2N5297 | CSA1362GR | AC183V | BFJ21 | BF871BA

 

 
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