UMH10NFHA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMH10NFHA
Código: H10
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 250 MHz
Ganancia de corriente contínua (hfe): 80
Empaquetado / Estuche: SC-88
Búsqueda de reemplazo de transistor bipolar UMH10NFHA
UMH10NFHA Datasheet (PDF)
1.1. umh10nfha.pdf 
Size:1017K _upd
AEC-Q101 Qualified General purpose (dual digital transistors) EMH10 / UMH10N EMH10FHA / UMH10NFHA Structure Dimensions (Unit : mm) Epitaxial planar type NPN silicon transistor EMH10FHA EMH10 (Built-in resistor type) (4) (3) (5) (2) (6) (1) Features 1.2 1.6 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machi
4.1. umh10n imh10a h10 sot23-6 sot363.pdf Size:61K _rohm
Transistors General purpose (dual digital transistors) UMH10N / IMH10A FFeatures FExternal dimensions (Units: mm) 1) Two DTC123J chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN sil
4.2. umh10n.pdf Size:61K _rohm
Transistors General purpose (dual digital transistors) UMH10N / IMH10A FFeatures FExternal dimensions (Units: mm) 1) Two DTC123J chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN sil
4.3. umh10n.pdf Size:291K _htsemi
UMH10N General purpose transistors (dual transistors) SOT-363 FEATURES Two DTC123J chips in a package 1 Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. Marking: H10 Equivalent circuit Absolute maximum ratings(Ta=25?) Parameter Symbol Limits Unit Supply vo
Otros transistores... UMD22N , UMD22NFHA , UMD2NFHA , UMD3NFHA , UMD4N , UMD5N , UMD6NFHA , UMD9NFHA , BD139 , UMH11NFHA , UMH14N , UMH14NFHA , UMH1NFHA , UMH2NFHA , UMH32N , UMH33N , UMH3NFHA .
