All Transistors. UMH10NFHA Datasheet

 

UMH10NFHA Datasheet, Equivalent, Cross Reference Search


   Type Designator: UMH10NFHA
   SMD Transistor Code: H10
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC-88

 UMH10NFHA Transistor Equivalent Substitute - Cross-Reference Search

   

UMH10NFHA Datasheet (PDF)

 ..1. Size:1017K  rohm
emh10fha umh10nfha.pdf

UMH10NFHA
UMH10NFHA

AEC-Q101 QualifiedGeneral purpose (dual digital transistors) EMH10 / UMH10N EMH10FHA / UMH10NFHAStructure Dimensions (Unit : mm)Epitaxial planar type NPN silicon transistor EMH10FHAEMH10(Built-in resistor type)(4) (3)(5) (2)(6) (1)Features1.21.61) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machi

 8.1. Size:61K  rohm
umh10n imh10a h10 sot23-6 sot363.pdf

UMH10NFHA
UMH10NFHA

TransistorsGeneral purpose(dual digital transistors)UMH10N / IMH10AFFeatures FExternal dimensions (Units: mm)1) Two DTC123J chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN

 8.2. Size:61K  rohm
umh10n.pdf

UMH10NFHA
UMH10NFHA

TransistorsGeneral purpose(dual digital transistors)UMH10N / IMH10AFFeatures FExternal dimensions (Units: mm)1) Two DTC123J chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN

 8.3. Size:291K  htsemi
umh10n.pdf

UMH10NFHA

UMH10N General purpose transistors (dual transistors)SOT-363 FEATURES Two DTC123J chips in a package 1 Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. Marking: H10 Equivalent circuit Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitSupp

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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