UMH3NFHA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMH3NFHA
Código: H3
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 250 MHz
Ganancia de corriente contínua (hfe): 100
Empaquetado / Estuche: SOT-353
Búsqueda de reemplazo de transistor bipolar UMH3NFHA
UMH3NFHA Datasheet (PDF)
1.1. emh3fha umh3nfha imh3afra.pdf 
Size:1263K _update
EMH3FHA / UMH3NFHA / IMH3AFRA EMH3 / UMH3N / IMH3A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCEO (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 4.7kW EMH3 UMH3N EMH3FHA UMH3NFHA (SC-107C) SOT-353 (SC-88) SMT6 (4) (5
1.2. umh3nfha.pdf Size:1222K _upd
EMH3FHA / UMH3NFHA / IMH3AFRA EMH3 / UMH3N / IMH3A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCEO (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 4.7kW EMH3 UMH3N EMH3FHA UMH3NFHA (SC-107C) SOT-353 (SC-88) SMT6 (4) (5
5.1. emh3 umh3n imh3a.pdf Size:61K _rohm
EMH3 / UMH3N / IMH3A Transistors General purpose (dual digital transistors) EMH3 / UMH3N / IMH3A External dimensions (Unit : mm) Features 1) Two DTAK13Ts chips in a EMT or UMT or SMT EMH3 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminating interference.
5.2. umh3n.pdf Size:61K _rohm
EMH3 / UMH3N / IMH3A Transistors General purpose (dual digital transistors) EMH3 / UMH3N / IMH3A External dimensions (Unit : mm) Features 1) Two DTAK13Ts chips in a EMT or UMT or SMT EMH3 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminating interference.
5.3. umh3n imh3a h3 sot23-6sot363.pdf Size:50K _rohm
Transistors General purpose (dual digital transistors) UMH3N / IMH3A FFeatures FExternal dimensions (Units: mm) 1) Two DTAK13Ts chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. FStructure Epitaxial planar type NPN silicon transistor The following characteristics ap
Otros transistores... 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .
