All Transistors. UMH3NFHA Datasheet

 

UMH3NFHA Datasheet, Equivalent, Cross Reference Search

Type Designator: UMH3NFHA

SMD Transistor Code: H3

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-353

UMH3NFHA Transistor Equivalent Substitute - Cross-Reference Search

 

UMH3NFHA Datasheet (PDF)

1.1. emh3fha umh3nfha imh3afra.pdf Size:1263K _update

UMH3NFHA
UMH3NFHA

EMH3FHA / UMH3NFHA / IMH3AFRA EMH3 / UMH3N / IMH3A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCEO (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 4.7kW EMH3 UMH3N EMH3FHA UMH3NFHA (SC-107C) SOT-353 (SC-88) SMT6 (4) (5

1.2. umh3nfha.pdf Size:1222K _upd

UMH3NFHA
UMH3NFHA

EMH3FHA / UMH3NFHA / IMH3AFRA EMH3 / UMH3N / IMH3A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCEO (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 4.7kW EMH3 UMH3N EMH3FHA UMH3NFHA (SC-107C) SOT-353 (SC-88) SMT6 (4) (5

 5.1. emh3 umh3n imh3a.pdf Size:61K _rohm

UMH3NFHA
UMH3NFHA

EMH3 / UMH3N / IMH3A Transistors General purpose (dual digital transistors) EMH3 / UMH3N / IMH3A External dimensions (Unit : mm) Features 1) Two DTAK13Ts chips in a EMT or UMT or SMT EMH3 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminating interference.

5.2. umh3n.pdf Size:61K _rohm

UMH3NFHA
UMH3NFHA

EMH3 / UMH3N / IMH3A Transistors General purpose (dual digital transistors) EMH3 / UMH3N / IMH3A External dimensions (Unit : mm) Features 1) Two DTAK13Ts chips in a EMT or UMT or SMT EMH3 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminating interference.

 5.3. umh3n imh3a h3 sot23-6sot363.pdf Size:50K _rohm

UMH3NFHA
UMH3NFHA

Transistors General purpose (dual digital transistors) UMH3N / IMH3A FFeatures FExternal dimensions (Units: mm) 1) Two DTAK13Ts chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. FStructure Epitaxial planar type NPN silicon transistor The following characteristics ap

Datasheet: UMH10NFHA , UMH11NFHA , UMH14N , UMH14NFHA , UMH1NFHA , UMH2NFHA , UMH32N , UMH33N , BC108 , UMH4NFHA , UMH5NFHA , UMH6NFHA , UMH8NFHA , UMH9NFHA , US6H23 , 2SC9014 , 3DD4212DT .

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BJT: E3150 | 3DD2499 | 3DD4212DT | 2SC9014 | US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA | UMH1NFHA | UMH14NFHA | UMH14N | UMH11NFHA | UMH10NFHA | UMD9NFHA |

 

 

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