KRC663E Todos los transistores

 

KRC663E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KRC663E

Código: NO

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 22 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 250 MHz

Ganancia de corriente contínua (hfe): 120

Empaquetado / Estuche: TESV

Búsqueda de reemplazo de transistor bipolar KRC663E

 

KRC663E Datasheet (PDF)

5.1. krc660u-krc664u.pdf Size:51K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC660U~KRC664U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Packing

5.2. krc660f-krc664f.pdf Size:387K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC660F~KRC664F EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. DIM MILLIMETERS ·High Packing Density. _ + A 1.0 0.05 _ + A1 0.7 0.05 ·Thin Fine Pitch Super m

 5.3. krc666u-krc672u.pdf Size:428K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC666U~KRC672U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES B1 ·With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ ·Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 ·Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D

5.4. krc666e-krc672e.pdf Size:69K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC666E~KRC672E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B B1 FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + ·Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 _ + B1 1.2 0.05 C 0.50 3

 5.5. krc660e-krc664e.pdf Size:50K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC660E~KRC664E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + ·Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 ·High Packing Density. _

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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