KRC663E Datasheet. Specs and Replacement

Type Designator: KRC663E  📄📄 

SMD Transistor Code: NO

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 22 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TESV

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KRC663E datasheet

 9.1. Size:50K  kec

 krc660e-krc664e.pdf pdf_icon

KRC663E

SEMICONDUCTOR KRC660E KRC664E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _... See More ⇒

 9.2. Size:69K  kec

 krc666e-krc672e.pdf pdf_icon

KRC663E

SEMICONDUCTOR KRC666E KRC672E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 _ + B1 1.2 0.05 C 0.50 3 ... See More ⇒

 9.3. Size:51K  kec

 krc660u-krc664u.pdf pdf_icon

KRC663E

SEMICONDUCTOR KRC660U KRC664U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Packing ... See More ⇒

 9.4. Size:387K  kec

 krc660f-krc664f.pdf pdf_icon

KRC663E

SEMICONDUCTOR KRC660F KRC664F EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. DIM MILLIMETERS High Packing Density. _ + A 1.0 0.05 _ + A1 0.7 0.05 Thin Fine Pitch Super m... See More ⇒

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Detailed specifications: US6H23, 2SC9014, 3DD4212DT, 3DD2499, E3150, 3DD5287, MP1526, SMUN5335DW, A1941, KRC664E, 2SA1897, 2SC5966, 2SC6092LS, 3DD4204D, CHT847BWPT, STC8050N, XP6111

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