All Transistors. KRC663E Datasheet

 

KRC663E Datasheet, Equivalent, Cross Reference Search

Type Designator: KRC663E

SMD Transistor Code: NO

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 22 kOhm

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TESV

KRC663E Transistor Equivalent Substitute - Cross-Reference Search

 

KRC663E Datasheet (PDF)

5.1. krc660f-krc664f.pdf Size:387K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC660F~KRC664F EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. DIM MILLIMETERS ·High Packing Density. _ + A 1.0 0.05 _ + A1 0.7 0.05 ·Thin Fine Pitch Super m

5.2. krc660e-krc664e.pdf Size:50K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC660E~KRC664E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + ·Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 ·High Packing Density. _

 5.3. krc666e-krc672e.pdf Size:69K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC666E~KRC672E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B B1 FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + ·Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 _ + B1 1.2 0.05 C 0.50 3

5.4. krc660u-krc664u.pdf Size:51K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC660U~KRC664U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Packing

 5.5. krc666u-krc672u.pdf Size:428K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC666U~KRC672U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES B1 ·With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ ·Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 ·Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D

Datasheet: 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 
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