All Transistors. KRC663E Datasheet

 

KRC663E Datasheet and Replacement


   Type Designator: KRC663E
   SMD Transistor Code: NO
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 22 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TESV
 

 KRC663E Substitution

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KRC663E Datasheet (PDF)

 9.1. Size:50K  kec
 krc660e-krc664e.pdf pdf_icon

KRC663E

SEMICONDUCTOR KRC660E~KRC664EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.Simplify Circuit Design.1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process._+A1 1.0 0.052_+B 1.6 0.05High Packing Density._

 9.2. Size:69K  kec
 krc666e-krc672e.pdf pdf_icon

KRC663E

SEMICONDUCTOR KRC666E~KRC672EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONBB1FEATURESWith Built-in Bias Resistors.Simplify Circuit Design.1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process._+A1 1.0 0.052_+B 1.6 0.05_+B1 1.2 0.05C 0.503

 9.3. Size:51K  kec
 krc660u-krc664u.pdf pdf_icon

KRC663E

SEMICONDUCTOR KRC660U~KRC664UEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.1 5DIM MILLIMETERS_Simplify Circuit Design. A 2.00 + 0.202 _A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D_B1 1.25 + 0.1High Packing

 9.4. Size:387K  kec
 krc660f-krc664f.pdf pdf_icon

KRC663E

SEMICONDUCTOR KRC660F~KRC664FEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.DIM MILLIMETERSHigh Packing Density._+A 1.0 0.05_+A1 0.7 0.05Thin Fine Pitch Super m

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Datasheet: US6H23 , 2SC9014 , 3DD4212DT , 3DD2499 , E3150 , 3DD5287 , MP1526 , SMUN5335DW , BC557 , KRC664E , 2SA1897 , 2SC5966 , 2SC6092LS , 3DD4204D , CHT847BWPT , STC8050N , XP6111 .

History: BUP51 | 2SC5176 | ST11 | ST4202 | 2SC2673 | 3CA1203 | 2SB835

Keywords - KRC663E transistor datasheet

 KRC663E cross reference
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