KRC663E PDF Specs and Replacement
Type Designator: KRC663E
SMD Transistor Code: NO
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TESV
KRC663E Substitution
KRC663E PDF detailed specifications
krc660e-krc664e.pdf
SEMICONDUCTOR KRC660E KRC664E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _... See More ⇒
krc666e-krc672e.pdf
SEMICONDUCTOR KRC666E KRC672E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 _ + B1 1.2 0.05 C 0.50 3 ... See More ⇒
krc660u-krc664u.pdf
SEMICONDUCTOR KRC660U KRC664U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Packing ... See More ⇒
krc660f-krc664f.pdf
SEMICONDUCTOR KRC660F KRC664F EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. DIM MILLIMETERS High Packing Density. _ + A 1.0 0.05 _ + A1 0.7 0.05 Thin Fine Pitch Super m... See More ⇒
Detailed specifications: US6H23 , 2SC9014 , 3DD4212DT , 3DD2499 , E3150 , 3DD5287 , MP1526 , SMUN5335DW , A1941 , KRC664E , 2SA1897 , 2SC5966 , 2SC6092LS , 3DD4204D , CHT847BWPT , STC8050N , XP6111 .
History: UN121K
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