2SA1897 Todos los transistores

 

2SA1897 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1897

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 6 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 180 MHz

Capacitancia de salida (Cc): 220 pF

Ganancia de corriente contínua (hfe): 200

Empaquetado / Estuche: NEC

Búsqueda de reemplazo de transistor bipolar 2SA1897

 

2SA1897 Datasheet (PDF)

1.1. 2sa1897.pdf Size:107K _nec

2SA1897
2SA1897

DATA SHEET SILICON TRANSISTOR 2SA1897 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1897 features a low saturation voltage and is available PACKAGE DRAWING (UNIT: mm) for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES • High current capaci

4.1. 2sa1892.pdf Size:224K _toshiba

2SA1897
2SA1897



4.2. 2sa1891.pdf Size:128K _toshiba

2SA1897
2SA1897



 4.3. 2sa1893.pdf Size:205K _toshiba

2SA1897
2SA1897



4.4. 2sa1899.pdf Size:180K _toshiba

2SA1897
2SA1897



 4.5. 2sa1898.pdf Size:97K _sanyo

2SA1897
2SA1897

Ordering number:5049 PNP Epitaxial Planar Silicon Transistor 2SA1898 DC/DC Converter Application Applications Package Dimensions · High-speed switching. unit:mm 2038A Features [2SA1898] · Adoption of FBET and MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. 1 : Base 2 : Collector 3 :Emitter SANYO : PCP (Bo

4.6. 2sa1896.pdf Size:86K _sanyo

2SA1897
2SA1897

Ordering number:4718A PNP Epitaxial Planar Silicon Transistor 2SA1896 DC/DC Converter, Motor Driver Applications Features Package Dimensions · Adoption of FBET processes. unit:mm · Large current capacity. 2038A · Low collector-to-emitter saturation voltage. [2SA1896] · Small size making it easy to provide high-density, small-sized hybrid ICs. 1 : Base 2 : Collector 3 : Em

4.7. 2sa1890.pdf Size:37K _panasonic

2SA1897
2SA1897

Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SC5026 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45° Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazi

4.8. 2sa1890 e.pdf Size:41K _panasonic

2SA1897
2SA1897

Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SC5026 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45° Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazi

4.9. 2sa1890.pdf Size:886K _kexin

2SA1897
2SA1897

SMD Type Transistors PNP Transistors 2SA1890 ■ Features 1.70 0.1 ● Low collector to emitter saturation voltage VCE(sat). ● High collector to emitter voltage VCEO. ● Complementary to 2SC5026. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage

4.10. 2sa1898.pdf Size:1137K _kexin

2SA1897
2SA1897

SMD Type Transistors PNP Transistors 2SA1898 1.70 0.1 ■ Features ● Large current capacity. ● Low collector-to-emitter saturation voltage. 0.42 0.1 0.46 0.1 ● Fast switching speed. 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -15 V Emitter - Base

4.11. 2sa1896.pdf Size:1170K _kexin

2SA1897
2SA1897

SMD Type Transistors PNP Transistors 2SA1896 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=-2.5A ● Collector Emitter Voltage VCEO=-20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltag

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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