2SA1897 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1897
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 6
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180
MHz
Capacitancia de salida (Cc): 220
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: NEC
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2SA1897 PDF detailed specifications
..1. Size:107K nec
2sa1897.pdf 

DATA SHEET SILICON TRANSISTOR 2SA1897 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1897 features a low saturation voltage and is available PACKAGE DRAWING (UNIT mm) for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES High current capaci... See More ⇒
8.5. Size:86K sanyo
2sa1896.pdf 

Ordering number 4718A PNP Epitaxial Planar Silicon Transistor 2SA1896 DC/DC Converter, Motor Driver Applications Features Package Dimensions Adoption of FBET processes. unit mm Large current capacity. 2038A Low collector-to-emitter saturation voltage. [2SA1896] Small size making it easy to provide high-density, small-sized hybrid ICs. 1 Base 2 Collector 3 Em... See More ⇒
8.6. Size:97K sanyo
2sa1898.pdf 

Ordering number 5049 PNP Epitaxial Planar Silicon Transistor 2SA1898 DC/DC Converter Application Applications Package Dimensions High-speed switching. unit mm 2038A Features [2SA1898] Adoption of FBET and MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. 1 Base 2 Collector 3 Emitter SANYO PCP (Bo... See More ⇒
8.7. Size:41K panasonic
2sa1890 e.pdf 

Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC5026 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazi... See More ⇒
8.8. Size:37K panasonic
2sa1890.pdf 

Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC5026 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazi... See More ⇒
8.9. Size:1170K kexin
2sa1896.pdf 

SMD Type Transistors PNP Transistors 2SA1896 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2.5A Collector Emitter Voltage VCEO=-20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltag... See More ⇒
8.10. Size:886K kexin
2sa1890.pdf 

SMD Type Transistors PNP Transistors 2SA1890 Features 1.70 0.1 Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SC5026. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage ... See More ⇒
8.11. Size:1137K kexin
2sa1898.pdf 

SMD Type Transistors PNP Transistors 2SA1898 1.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage. 0.42 0.1 0.46 0.1 Fast switching speed. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -15 V Emitter - Base ... See More ⇒
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