2SA1897 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1897
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 6 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 220 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: NEC
2SA1897 Transistor Equivalent Substitute - Cross-Reference Search
2SA1897 Datasheet (PDF)
2sa1897.pdf
DATA SHEETSILICON TRANSISTOR2SA1897PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SA1897 features a low saturation voltage and is available PACKAGE DRAWING (UNIT: mm)for high current control in small dimension. This transistor is idealfor high efficiency DC/DC converters due to fast switching speed.FEATURES High current capaci
2sa1896.pdf
Ordering number:4718APNP Epitaxial Planar Silicon Transistor2SA1896DC/DC Converter, Motor Driver ApplicationsFeatures Package Dimensions Adoption of FBET processes.unit:mm Large current capacity.2038A Low collector-to-emitter saturation voltage.[2SA1896] Small size making it easy to provide high-density,small-sized hybrid ICs.1 : Base2 : Collector3 : Em
2sa1898.pdf
Ordering number:5049PNP Epitaxial Planar Silicon Transistor2SA1898DC/DC Converter ApplicationApplications Package Dimensions High-speed switching. unit:mm2038AFeatures [2SA1898] Adoption of FBET and MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed.1 : Base2 : Collector3 :EmitterSANYO : PCP(Bo
2sa1890 e.pdf
Transistor2SA1890Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC50261.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.45Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazi
2sa1890.pdf
Transistor2SA1890Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC50261.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.45Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazi
2sa1896.pdf
SMD Type TransistorsPNP Transistors2SA1896SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2.5A Collector Emitter Voltage VCEO=-20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltag
2sa1890.pdf
SMD Type TransistorsPNP Transistors2SA1890 Features1.70 0.1 Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SC5026.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage
2sa1898.pdf
SMD Type TransistorsPNP Transistors2SA18981.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage.0.42 0.10.46 0.1 Fast switching speed.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -15 V Emitter - Base
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
