MJ13001A Todos los transistores

 ..1. Size:33K  no
 mj13001a.pdf

 8.1. Size:82K  njs
 mj13009.pdf

 9.1. Size:207K  inchange semiconductor
 mj13070 mj13071.pdf

isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13070 CEO(SUS) = 450V(Min) MJ13071 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.

 9.2. Size:208K  inchange semiconductor
 mj13090 mj13091.pdf

isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13090 CEO(SUS) = 450V(Min) MJ13091 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.

 9.3. Size:137K  inchange semiconductor
 mj13070 13071.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 400V(Min) MJ13070 = 450V(Min) MJ13071 High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su

 9.4. Size:187K  inchange semiconductor
 mj13090 13091.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 400V(Min) MJ13090 = 450V(Min) MJ13091 High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su

 9.5. Size:137K  inchange semiconductor
 mj13080 13081.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 400V(Min) MJ13080 = 450V(Min) MJ13081 High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su

 9.6. Size:207K  inchange semiconductor
 mj13080 mj13081.pdf

isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13080 CEO(SUS) = 450V(Min) MJ13081 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.