MJ13001A Datasheet and Replacement
Type Designator: MJ13001A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO92
MJ13001A Transistor Equivalent Substitute - Cross-Reference Search
MJ13001A Datasheet (PDF)
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isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13070 CEO(SUS) = 450V(Min) MJ13071 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.... See More ⇒
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Datasheet: 3DD2901 , 3DD5027 , AV8050S , BFR360F , HLD133D , MP1620 , MRF660 , HSC2682 , BD135 , 2T665A9 , 2T665B9 , FW26025A1 , 2SB817C , 2SD1047C , 2SC4714 , 2SC6089 , CE1A3Q .
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History: TN4248 | BF255 | TA1660 | BF254B | 2SC4219 | TA1796 | TA1882
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