MJ13001A Datasheet. Specs and Replacement
Type Designator: MJ13001A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO92
📄📄 Copy
MJ13001A Substitution
- BJT ⓘ Cross-Reference Search
MJ13001A datasheet
isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13070 CEO(SUS) = 450V(Min) MJ13071 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.... See More ⇒
isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13090 CEO(SUS) = 450V(Min) MJ13091 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.... See More ⇒
Detailed specifications: 3DD2901, 3DD5027, AV8050S, BFR360F, HLD133D, MP1620, MRF660, HSC2682, 8550, 2T665A9, 2T665B9, FW26025A1, 2SB817C, 2SD1047C, 2SC4714, 2SC6089, CE1A3Q
Keywords - MJ13001A pdf specs
MJ13001A cross reference
MJ13001A equivalent finder
MJ13001A pdf lookup
MJ13001A substitution
MJ13001A replacement
BJT Parameters and How They Relate
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
irfz24n | bd135 | d880 | 2n5457 equivalent | 2sc945 replacement | 9014 transistor | irfp260n datasheet | irfp250m


