Справочник транзисторов. MJ13001A

 

Биполярный транзистор MJ13001A - описание производителя. Основные параметры. Даташиты.

Наименование производителя: MJ13001A

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.625 W

Макcимально допустимое напряжение коллектор-база (Ucb): 500 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V

Макcимальный постоянный ток коллектора (Ic): 0.5 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 10 MHz

Статический коэффициент передачи тока (hfe): 8

Корпус транзистора: TO92

Аналоги (замена) для MJ13001A

 

 

MJ13001A Datasheet (PDF)

1.1. mj13001a.pdf Size:33K _update_bjt

MJ13001A



4.1. mj13009.pdf Size:82K _upd

MJ13001A
MJ13001A



 5.1. mj13080 13081.pdf Size:137K _inchange_semiconductor

MJ13001A
MJ13001A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJ13080 = 450V(Min)—MJ13081 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suite

5.2. mj13090 13091.pdf Size:187K _inchange_semiconductor

MJ13001A
MJ13001A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJ13090 = 450V(Min)—MJ13091 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suite

 5.3. mj13070 mj13071.pdf Size:207K _inchange_semiconductor

MJ13001A
MJ13001A

isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION · Collector-Emitter Sustaining Voltage- : V = 400V(Min)—MJ13070 CEO(SUS) = 450V(Min)—MJ13071 ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.

5.4. mj13070 13071.pdf Size:137K _inchange_semiconductor

MJ13001A
MJ13001A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJ13070 = 450V(Min)—MJ13071 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suite

 5.5. mj13090 mj13091.pdf Size:208K _inchange_semiconductor

MJ13001A
MJ13001A

isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION · Collector-Emitter Sustaining Voltage- : V = 400V(Min)—MJ13090 CEO(SUS) = 450V(Min)—MJ13091 ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.

5.6. mj13080 mj13081.pdf Size:207K _inchange_semiconductor

MJ13001A
MJ13001A

isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION · Collector-Emitter Sustaining Voltage- : V = 400V(Min)—MJ13080 CEO(SUS) = 450V(Min)—MJ13081 ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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