Биполярный транзистор MJ13001A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJ13001A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.625 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hfe): 8
Корпус транзистора: TO92
MJ13001A Datasheet (PDF)
mj13070 mj13071.pdf
isc Silicon NPN Power Transistors MJ13070/13071DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13070CEO(SUS)= 450V(Min)MJ13071High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical.
mj13090 mj13091.pdf
isc Silicon NPN Power Transistors MJ13090/13091DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13090CEO(SUS)= 450V(Min)MJ13091High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical.
mj13070 13071.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13070 = 450V(Min)MJ13071 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su
mj13090 13091.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13090 = 450V(Min)MJ13091 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su
mj13080 13081.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13080 = 450V(Min)MJ13081 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su
mj13080 mj13081.pdf
isc Silicon NPN Power Transistors MJ13080/13081DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13080CEO(SUS)= 450V(Min)MJ13081High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical.
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050