FW26025A1 Todos los transistores

 

FW26025A1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FW26025A1
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia Base-Emisor R2 = 8 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 160 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 20 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 600 pF
   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO3
 

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FW26025A1 datasheet

 ..1. Size:34K  st
 fw26025a1.pdf pdf_icon

FW26025A1

FW26025A1 PNP POWER DARLINGTON TRANSISTOR INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington 2 configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low TO-3 frequency switching

 ..2. Size:213K  inchange semiconductor
 fw26025a1.pdf pdf_icon

FW26025A1

isc Silicon PNP Darlington Power Transistor FW26025A1 DESCRIPTION High DC Current Gain- h = 5000(Min)@ I = -2A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear and switching industrial equipment ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

Otros transistores... BFR360F , HLD133D , MP1620 , MRF660 , HSC2682 , MJ13001A , 2T665A9 , 2T665B9 , TIP31 , 2SB817C , 2SD1047C , 2SC4714 , 2SC6089 , CE1A3Q , CHDTC114EKPT , 3DD5039 , 3DD5040 .

 

 

 


 
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