FW26025A1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FW26025A1

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia Base-Emisor R2 = 8 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 160 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 600 pF

Ganancia de corriente contínua (hFE): 750

Encapsulados: TO3

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FW26025A1 datasheet

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 fw26025a1.pdf pdf_icon

FW26025A1

FW26025A1 PNP POWER DARLINGTON TRANSISTOR INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington 2 configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low TO-3 frequency switching

 ..2. Size:213K  inchange semiconductor
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FW26025A1

isc Silicon PNP Darlington Power Transistor FW26025A1 DESCRIPTION High DC Current Gain- h = 5000(Min)@ I = -2A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear and switching industrial equipment ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

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