FW26025A1 Datasheet, Equivalent, Cross Reference Search
Type Designator: FW26025A1
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R2 = 8 kOhm
Maximum Collector Power Dissipation (Pc): 160 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO3
FW26025A1 Transistor Equivalent Substitute - Cross-Reference Search
FW26025A1 Datasheet (PDF)
fw26025a1.pdf
FW26025A1PNP POWER DARLINGTON TRANSISTOR INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION 1The FW26025A1 is a silicon Epitaxial-Base PNPpower transistor in monolithic Darlington 2configuration mounted in Jedec TO-3 metal case.It is inteded for general purpose amplifier and lowTO-3frequency switching
fw26025a1.pdf
isc Silicon PNP Darlington Power Transistor FW26025A1DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@ I = -2AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for linear and switching industrial equipmentABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
