All Transistors. FW26025A1 Datasheet

 

FW26025A1 Datasheet and Replacement


   Type Designator: FW26025A1
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R2 = 8 kOhm
   Maximum Collector Power Dissipation (Pc): 160 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 600 pF
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO3
 

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FW26025A1 Datasheet (PDF)

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FW26025A1

FW26025A1PNP POWER DARLINGTON TRANSISTOR INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION 1The FW26025A1 is a silicon Epitaxial-Base PNPpower transistor in monolithic Darlington 2configuration mounted in Jedec TO-3 metal case.It is inteded for general purpose amplifier and lowTO-3frequency switching

 ..2. Size:213K  inchange semiconductor
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FW26025A1

isc Silicon PNP Darlington Power Transistor FW26025A1DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@ I = -2AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for linear and switching industrial equipmentABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: BFR360F , HLD133D , MP1620 , MRF660 , HSC2682 , MJ13001A , 2T665A9 , 2T665B9 , 2SD2499 , 2SB817C , 2SD1047C , 2SC4714 , 2SC6089 , CE1A3Q , CHDTC114EKPT , 3DD5039 , 3DD5040 .

History: BC239B | 2SC1241 | CIL224 | CC337-16 | 2SD1162 | 2SC4675 | 2S720

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