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FW26025A1 Specs and Replacement


   Type Designator: FW26025A1
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R2 = 8 kOhm
   Maximum Collector Power Dissipation (Pc): 160 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 600 pF
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO3

 FW26025A1 Transistor Equivalent Substitute - Cross-Reference Search

   

FW26025A1 detailed specifications

 ..1. Size:34K  st
 fw26025a1.pdf pdf_icon

FW26025A1

FW26025A1 PNP POWER DARLINGTON TRANSISTOR INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington 2 configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low TO-3 frequency switching... See More ⇒

 ..2. Size:213K  inchange semiconductor
 fw26025a1.pdf pdf_icon

FW26025A1

isc Silicon PNP Darlington Power Transistor FW26025A1 DESCRIPTION High DC Current Gain- h = 5000(Min)@ I = -2A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear and switching industrial equipment ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

Detailed specifications: BFR360F , HLD133D , MP1620 , MRF660 , HSC2682 , MJ13001A , 2T665A9 , 2T665B9 , TIP31 , 2SB817C , 2SD1047C , 2SC4714 , 2SC6089 , CE1A3Q , CHDTC114EKPT , 3DD5039 , 3DD5040 .

History: 2N5302G

Keywords - FW26025A1 transistor specs

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