All Transistors. FW26025A1 Datasheet

 

FW26025A1 Datasheet, Equivalent, Cross Reference Search

Type Designator: FW26025A1

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R2 = 8 kOhm

Maximum Collector Power Dissipation (Pc): 160 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Collector Capacitance (Cc): 600 pF

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO3

FW26025A1 Transistor Equivalent Substitute - Cross-Reference Search

 

FW26025A1 Datasheet (PDF)

1.1. fw26025a1.pdf Size:34K _update_bjt

FW26025A1
FW26025A1

FW26025A1 ® PNP POWER DARLINGTON TRANSISTOR INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington 2 configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low TO-3 frequency switching

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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BJT: CHDTC114EKPT | CE1A3Q | 2SC6089 | 2SC4714 | 2SD1047C | 2SB817C | FW26025A1 | 2T665B9 | 2T665A9 | MJ13001A | HSC2682 | MRF660 | MP1620 | HLD133D | BFR360F | AV8050S | 3DD5027 | 3DD2901 | 3DD2102 | 3DD313 |

 

 

 
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