All Transistors. FW26025A1 Datasheet

 

FW26025A1 Datasheet, Equivalent, Cross Reference Search

Type Designator: FW26025A1

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R2 = 8 kOhm

Maximum Collector Power Dissipation (Pc): 160 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Collector Capacitance (Cc): 600 pF

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO3

FW26025A1 Transistor Equivalent Substitute - Cross-Reference Search

 

FW26025A1 Datasheet (PDF)

1.1. fw26025a1.pdf Size:34K _update_bjt

FW26025A1
FW26025A1

FW26025A1 ® PNP POWER DARLINGTON TRANSISTOR INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington 2 configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low TO-3 frequency switching

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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