FW26025A1 Datasheet, Equivalent, Cross Reference Search
Type Designator: FW26025A1
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R2 = 8 kOhm
Maximum Collector Power Dissipation (Pc): 160 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO3
FW26025A1 Transistor Equivalent Substitute - Cross-Reference Search
FW26025A1 Datasheet (PDF)
1.1. fw26025a1.pdf 
Size:34K _update_bjt
FW26025A1 ® PNP POWER DARLINGTON TRANSISTOR INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington 2 configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low TO-3 frequency switching
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
