FW26025A1 Datasheet. Specs and Replacement

Type Designator: FW26025A1  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R2 = 8 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 160 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 600 pF

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO3

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FW26025A1 datasheet

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FW26025A1

FW26025A1 PNP POWER DARLINGTON TRANSISTOR INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington 2 configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low TO-3 frequency switching... See More ⇒

 ..2. Size:213K  inchange semiconductor

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FW26025A1

isc Silicon PNP Darlington Power Transistor FW26025A1 DESCRIPTION High DC Current Gain- h = 5000(Min)@ I = -2A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear and switching industrial equipment ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

Detailed specifications: BFR360F, HLD133D, MP1620, MRF660, HSC2682, MJ13001A, 2T665A9, 2T665B9, TIP31, 2SB817C, 2SD1047C, 2SC4714, 2SC6089, CE1A3Q, CHDTC114EKPT, 3DD5039, 3DD5040

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