2SD1047C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1047C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 120 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 15 MHz
Capacitancia de salida (Cc): 140 pF
Ganancia de corriente contínua (hfe): 100
Empaquetado / Estuche: TO3PB
Búsqueda de reemplazo de transistor bipolar 2SD1047C
2SD1047C Datasheet (PDF)
1.1. 2sb817c 2sd1047c.pdf 
Size:445K _sanken-ele
Ordering number : ENN6987 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SB817C/2SD1047C 140V / 12A, AF 80W Output Applications Features Package Dimensions • Large current capacitance. unit : mm • Wide ASO and high durability against breakdown. 2022A • Adoption of MBIT process. [2SB817C/2SD1047C] 15.6 3.2 4.8 14.0 2.0
3.1. 2sd1047 2sd1047e.pdf Size:125K _sanyo
Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions · Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] · Wide ASO because of on-chip ballast re
3.2. 2sb817p 2sd1047p 2sd1047p.pdf Size:30K _sanyo
Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions • Capable of being mounted easily because of one- unit : mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P
3.3. 2sd1047e.pdf Size:206K _inchange_semiconductor
isc Product Specification isc Silicon NPN Power Transistor 2SD1047E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 140V(Min) (BR)CEO ·Good Linearity of h FE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB817E ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency a
3.4. 2sd1047.pdf Size:218K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 140V(Min) (BR)CEO ·Good Linearity of h FE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB817 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Recommend for 60W audio frequency amplifier output stage a
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
