Справочник транзисторов. 2SD1047C

 

Биполярный транзистор 2SD1047C - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1047C

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 120 W

Макcимально допустимое напряжение коллектор-база (Ucb): 160 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 12 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 15 MHz

Ёмкость коллекторного перехода (Cc): 140 pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO3PB

Аналоги (замена) для 2SD1047C

 

 

2SD1047C Datasheet (PDF)

1.1. 2sb817c 2sd1047c.pdf Size:445K _update_bjt

2SD1047C
2SD1047C

Ordering number : ENN6987 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SB817C/2SD1047C 140V / 12A, AF 80W Output Applications Features Package Dimensions • Large current capacitance. unit : mm • Wide ASO and high durability against breakdown. 2022A • Adoption of MBIT process. [2SB817C/2SD1047C] 15.6 3.2 4.8 14.0 2.0

1.2. 2sb817c 2sd1047c.pdf Size:445K _sanken-ele

2SD1047C
2SD1047C

Ordering number : ENN6987 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SB817C/2SD1047C 140V / 12A, AF 80W Output Applications Features Package Dimensions • Large current capacitance. unit : mm • Wide ASO and high durability against breakdown. 2022A • Adoption of MBIT process. [2SB817C/2SD1047C] 15.6 3.2 4.8 14.0 2.0

 3.1. 2sd1047e.pdf Size:125K _update_bjt

2SD1047C
2SD1047C

Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions · Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] · Wide ASO because of on-chip ballast re

3.2. 2sd1047 2sd1047e.pdf Size:125K _sanyo

2SD1047C
2SD1047C

Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions · Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] · Wide ASO because of on-chip ballast re

 3.3. 2sb817p 2sd1047p 2sd1047p.pdf Size:30K _sanyo

2SD1047C
2SD1047C

Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions • Capable of being mounted easily because of one- unit : mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P

3.4. 2sd1047e.pdf Size:206K _inchange_semiconductor

2SD1047C
2SD1047C

isc Product Specification isc Silicon NPN Power Transistor 2SD1047E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 140V(Min) (BR)CEO ·Good Linearity of h FE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB817E ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency a

 3.5. 2sd1047.pdf Size:218K _inchange_semiconductor

2SD1047C
2SD1047C

isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 140V(Min) (BR)CEO ·Good Linearity of h FE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB817 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Recommend for 60W audio frequency amplifier output stage a

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