2SC4714 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC4714 NPN Unit: mm10.5 0.54.5 0.29.5 0.21.4 0.18.0 0.2 VCEO Cob 3.7 0.1 (TC=25C)1.4 0.12.5 0.2 0.8

Ordering number:EN3688ANPN Triple Diffused Planar Silicon Transistor2SC47102100V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=2100V).unit:mm Small Cob (typical Cob=1.3pF).2079B Wide ASO.[2SC4710] High reliability (Adoption of HVP process).4.510.02.8 Full isolation packag

Ordering number : ENN3688B2SC4710LSNPN Triple Diffused Planar Silicon Transistor2SC4710LS2100V / 10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=2100V).unit : mm Small Cob(typical Cob=1.3pF).2079D Wide ASO.[2SC4710LS] High reliability(Adoption of HVP process).10.0 4.53.22.8

2SC4774 / 2SC4713K Transistors High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 2SC47741) Very low output-on resistance (Ron). 2) Low capacitance. 1.252.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO 12 VCollector-emitter voltage VCEO 6 V0.1Min.Emitter-base voltage VEBO 3 VE

Transistor2SC4715Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage

Transistor2SC4715Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage