2SC4714 Todos los transistores

 

2SC4714 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4714

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 70 MHz

Capacitancia de salida (Cc): 2.4 pF

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO220AB

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2SC4714 Datasheet (PDF)

1.1. 2sc4714.pdf Size:306K _update_bjt

2SC4714
2SC4714

パワートランジスタ 2SC4714 シリコン NPN 三重拡散プレーナ形 カラーテレビクロマ出力用 Unit: mm 10.5± 0.5 4.5± 0.2 9.5± 0.2 1.4± 0.1 特 長 8.0± 0.2 コレクタ・エミッタ電圧 VCEO が高い。 コレクタ出力容量 Cob が小さい。 φ 3.7± 0.1 絶対最大定格 (TC=25˚C) 1.4± 0.1 2.5± 0.2 項目 記号 定格 単位 0.8

4.1. 2sc4710ls.pdf Size:29K _sanyo

2SC4714
2SC4714

Ordering number : ENN3688B 2SC4710LS NPN Triple Diffused Planar Silicon Transistor 2SC4710LS 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=2100V). unit : mm Small Cob(typical Cob=1.3pF). 2079D Wide ASO. [2SC4710LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8 Full isola

4.2. 2sc4710.pdf Size:101K _sanyo

2SC4714
2SC4714

Ordering number:EN3688A NPN Triple Diffused Planar Silicon Transistor 2SC4710 2100V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=2100V). unit:mm Small Cob (typical Cob=1.3pF). 2079B Wide ASO. [2SC4710] High reliability (Adoption of HVP process). 4.5 10.0 2.8 Full isolation package. 3.2

 4.3. 2sc4774 2sc4713k.pdf Size:156K _rohm

2SC4714
2SC4714

High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K ?Features ?Dimensions (Unit : mm) 1) Very low output-on resistance (Ron). 2SC4774 2) Low capacitance. 2.0 0.9 0.3 0.2 0.7 (3) ?Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit (2) (1) Collector-base voltage VCBO 12 V 0.65 0.65 0.15 Collector-emitter voltage VCEO 6 V 1.3 Emitter-bas

4.4. 2sc4715.pdf Size:34K _panasonic

2SC4714
2SC4714

Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO

 4.5. 2sc4715 e.pdf Size:37K _panasonic

2SC4714
2SC4714

Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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