2SC4714 Datasheet PDF and Equivalents Search

 ..1. Size:306K  panasonic

 2sc4714.pdf

2SC4714 NPN Unit mm 10.5 0.5 4.5 0.2 9.5 0.2 1.4 0.1 8.0 0.2 VCEO Cob 3.7 0.1 (TC=25 C) 1.4 0.1 2.5 0.2 0.8... See More ⇒

 8.1. Size:101K  sanyo

 2sc4710.pdf

Ordering number EN3688A NPN Triple Diffused Planar Silicon Transistor 2SC4710 2100V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=2100V). unit mm Small Cob (typical Cob=1.3pF). 2079B Wide ASO. [2SC4710] High reliability (Adoption of HVP process). 4.5 10.0 2.8 Full isolation packag... See More ⇒

 8.2. Size:29K  sanyo

 2sc4710ls.pdf

... See More ⇒

 8.3. Size:76K  rohm

 2sc4774 2sc4713k.pdf

2SC4774 / 2SC4713K Transistors High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 2SC4774 1) Very low output-on resistance (Ron). 2) Low capacitance. 1.25 2.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 12 V Collector-emitter voltage VCEO 6 V 0.1Min. Emitter-base voltage VEBO 3 V E... See More ⇒

 8.4. Size:37K  panasonic

 2sc4715 e.pdf

Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage... See More ⇒

 8.5. Size:34K  panasonic

 2sc4715.pdf

Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage... See More ⇒