All Transistors. 2SC4714 Datasheet

 

2SC4714 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4714

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 2.4 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO220AB

2SC4714 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC4714 Datasheet (PDF)

1.1. 2sc4714.pdf Size:306K _update_bjt

2SC4714
2SC4714

パワートランジスタ 2SC4714 シリコン NPN 三重拡散プレーナ形 カラーテレビクロマ出力用 Unit: mm 10.5± 0.5 4.5± 0.2 9.5± 0.2 1.4± 0.1 特 長 8.0± 0.2 コレクタ・エミッタ電圧 VCEO が高い。 コレクタ出力容量 Cob が小さい。 φ 3.7± 0.1 絶対最大定格 (TC=25˚C) 1.4± 0.1 2.5± 0.2 項目 記号 定格 単位 0.8

4.1. 2sc4710.pdf Size:101K _sanyo

2SC4714
2SC4714

Ordering number:EN3688A NPN Triple Diffused Planar Silicon Transistor 2SC4710 2100V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=2100V). unit:mm Small Cob (typical Cob=1.3pF). 2079B Wide ASO. [2SC4710] High reliability (Adoption of HVP process). 4.5 10.0 2.8 Full isolation package. 3.2

4.2. 2sc4710ls.pdf Size:29K _sanyo

2SC4714
2SC4714

Ordering number : ENN3688B 2SC4710LS NPN Triple Diffused Planar Silicon Transistor 2SC4710LS 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=2100V). unit : mm Small Cob(typical Cob=1.3pF). 2079D Wide ASO. [2SC4710LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8 Full isola

 4.3. 2sc4774 2sc4713k.pdf Size:156K _rohm

2SC4714
2SC4714

High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K ?Features ?Dimensions (Unit : mm) 1) Very low output-on resistance (Ron). 2SC4774 2) Low capacitance. 2.0 0.9 0.3 0.2 0.7 (3) ?Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit (2) (1) Collector-base voltage VCBO 12 V 0.65 0.65 0.15 Collector-emitter voltage VCEO 6 V 1.3 Emitter-bas

4.4. 2sc4715 e.pdf Size:37K _panasonic

2SC4714
2SC4714

Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO

 4.5. 2sc4715.pdf Size:34K _panasonic

2SC4714
2SC4714

Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO

Datasheet: 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 , 2SC631 , BF494 , 2SC631AS , 2SC632 , 2SC632A , 2SC633 , 2SC633A , 2SC634 , 2SC634A , 2SC635 .

 

 
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