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3DD2553 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DD2553
   Código: D2553
   Material: Si
   Polaridad de transistor: NPN
   Resistencia Base-Emisor R2 = 0.05 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 1700 V
   Tensión colector-emisor (Vce): 600 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1.7 MHz
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO3P
 

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3DD2553 Datasheet (PDF)

 ..1. Size:150K  jilin sino
 3dd2553.pdf pdf_icon

3DD2553

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2553 FOR LOW FREQUENCY R3DD2553 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1700 V BV CBO8 A I C4 V(max) V

 8.1. Size:25K  shaanxi
 3dd255.pdf pdf_icon

3DD2553

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD257(3DD258)NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8

 9.1. Size:25K  shaanxi
 3dd257.pdf pdf_icon

3DD2553

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD257(3DD258)NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8

 9.2. Size:31K  shaanxi
 3dd253.pdf pdf_icon

3DD2553

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD253(254),3DD255(256),3DD257(258) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33

MOSTRAR MÁS

Otros transistores... EB102 , FA1L3Z-L36 , FA1L3Z-L37 , FA1L3Z-L38 , KSC5802D , KTC601UY , NP061A3 , 2SD1710C , TIP3055 , 3DA4544R , 3DA4544O , 3DA4544Y , CHT807PTQ , CHT807PTR , CHT807PTS , FJP3305H2 , RD9FE-R .

History: 3DD5287 | 40363 | 2SC1023 | 2SC1460 | 2SC1375 | TN3404 | DM150P

 

 
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