3DD2553 Todos los transistores

 

3DD2553 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3DD2553

Código: D2553

Material: Si

Polaridad de transistor: NPN

Resistencia Base-Emisor R2 = 0.05 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 1700 V

Tensión colector-emisor (Vce): 600 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 1.7 MHz

Ganancia de corriente contínua (hfe): 5

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de transistor bipolar 3DD2553

 

3DD2553 Datasheet (PDF)

1.1. 3dd2553.pdf Size:150K _update_bjt

3DD2553
3DD2553

低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2553 FOR LOW FREQUENCY R 3DD2553 封装 Package 主要参数 MAIN CHARACTERISTICS TO-3P(H)IS 1700 V BV CBO 8 A I C 4 V(max) V CE(sat) t 0.7 μs(max) f 用途 APPLICATIONS 彩色电视机行输出电路 Horizontal deflection output for color TV. 1 2 3 FEATURES 产

4.1. 3dd255.pdf Size:25K _china

3DD2553

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD257(3DD258) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8

 5.1. 3dd259.pdf Size:32K _china

3DD2553

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD259(260,261), 3DD262(263) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, Q

5.2. 3dd253.pdf Size:31K _china

3DD2553

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD253(254),3DD255(256),3DD257(258) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33

 5.3. 3dd257.pdf Size:25K _china

3DD2553

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD257(3DD258) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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