3DD2553 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD2553
Código: D2553
Material: Si
Polaridad de transistor: NPN
Resistencia Base-Emisor R2 = 0.05 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1700 V
Tensión colector-emisor (Vce): 600 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1.7 MHz
Ganancia de corriente contínua (hFE): 5
Encapsulados: TO3P
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3DD2553 datasheet
3dd255.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD257(3DD258) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ8
3dd257.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD257(3DD258) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ8
3dd253.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD253(254),3DD255(256),3DD257(258) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33
Otros transistores... EB102, FA1L3Z-L36, FA1L3Z-L37, FA1L3Z-L38, KSC5802D, KTC601UY, NP061A3, 2SD1710C, A1015, 3DA4544R, 3DA4544O, 3DA4544Y, CHT807PTQ, CHT807PTR, CHT807PTS, FJP3305H2, RD9FE-R
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