All Transistors. 3DD2553 Datasheet

 

3DD2553 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD2553

SMD Transistor Code: D2553

Material of Transistor: Si

Polarity: NPN

Built in Bias Resistor R2 = 0.05 kOhm

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1700 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1.7 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3P

3DD2553 Transistor Equivalent Substitute - Cross-Reference Search

 

3DD2553 Datasheet (PDF)

1.1. 3dd2553.pdf Size:150K _update_bjt

3DD2553
3DD2553

低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2553 FOR LOW FREQUENCY R 3DD2553 封装 Package 主要参数 MAIN CHARACTERISTICS TO-3P(H)IS 1700 V BV CBO 8 A I C 4 V(max) V CE(sat) t 0.7 μs(max) f 用途 APPLICATIONS 彩色电视机行输出电路 Horizontal deflection output for color TV. 1 2 3 FEATURES 产

4.1. 3dd255.pdf Size:25K _china

3DD2553

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD257(3DD258) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8

 5.1. 3dd259.pdf Size:32K _china

3DD2553

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD259(260,261), 3DD262(263) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, Q

5.2. 3dd253.pdf Size:31K _china

3DD2553

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD253(254),3DD255(256),3DD257(258) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33

 5.3. 3dd257.pdf Size:25K _china

3DD2553

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD257(3DD258) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8

Datasheet: 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 , 2SC631 , BF494 , 2SC631AS , 2SC632 , 2SC632A , 2SC633 , 2SC633A , 2SC634 , 2SC634A , 2SC635 .

 

 
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