2ST501T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2ST501T
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 330 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO-220C
Búsqueda de reemplazo de transistor bipolar 2ST501T
2ST501T Datasheet (PDF)
2st501t.pdf
2ST501THIGH VOLTAGE NPN POWER TRANSISTORn HIGH VOLTAGE SPECIAL DARLINGTON Figure 1: PackageSTRUCTUREn VERY RUGGED BIPOLAR TECHNOLOGYn HIGH OPERATION JUNCTIONTEMPERATUREn HIGH DC CURRENT GAINAPPLICATIONS3n DRIVER FOR SOLENOID, RELAY AND 2MOTOR 1 TO-220DESCRIPTIONThe 2ST501T is a High Voltage NPN silicontransistor in monolithic special Darlingtonconfiguration mou
2st501t.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2ST501TDESCRIPTIONLow Collector Saturation VoltageHigh DC Current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersRelay & solenoid driversMotor controlsGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: KSE800 | NKT53 | 2SC612 | 2SC1162C | NPS3640 | MJE210G | KTC4374
History: KSE800 | NKT53 | 2SC612 | 2SC1162C | NPS3640 | MJE210G | KTC4374
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050