2ST501T Specs and Replacement
Type Designator: 2ST501T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 330 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO-220C
2ST501T Substitution
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2ST501T datasheet
2ST501T HIGH VOLTAGE NPN POWER TRANSISTOR n HIGH VOLTAGE SPECIAL DARLINGTON Figure 1 Package STRUCTURE n VERY RUGGED BIPOLAR TECHNOLOGY n HIGH OPERATION JUNCTION TEMPERATURE n HIGH DC CURRENT GAIN APPLICATIONS 3 n DRIVER FOR SOLENOID, RELAY AND 2 MOTOR 1 TO-220 DESCRIPTION The 2ST501T is a High Voltage NPN silicon transistor in monolithic special Darlington configuration mou... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2ST501T DESCRIPTION Low Collector Saturation Voltage High DC Current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers Relay & solenoid drivers Motor controls General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
Detailed specifications: 2N3171H , 2N3772J , 2NC5566 , 2SA1012D , 2SC5200H , 2SD1286-Z , 2SD1804L-T , 2SD2901 , 2SC2655 , 3CD9A , 3CD9B , 3CD9C , 3CD9D , 3CD9F , 3CF20D , 3DA98 , 3DA98J .
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