All Transistors. 2ST501T Datasheet

 

2ST501T Datasheet and Replacement


   Type Designator: 2ST501T
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 330 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO-220C
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2ST501T Datasheet (PDF)

 ..1. Size:148K  st
 2st501t.pdf pdf_icon

2ST501T

2ST501THIGH VOLTAGE NPN POWER TRANSISTORn HIGH VOLTAGE SPECIAL DARLINGTON Figure 1: PackageSTRUCTUREn VERY RUGGED BIPOLAR TECHNOLOGYn HIGH OPERATION JUNCTIONTEMPERATUREn HIGH DC CURRENT GAINAPPLICATIONS3n DRIVER FOR SOLENOID, RELAY AND 2MOTOR 1 TO-220DESCRIPTIONThe 2ST501T is a High Voltage NPN silicontransistor in monolithic special Darlingtonconfiguration mou

 ..2. Size:211K  inchange semiconductor
 2st501t.pdf pdf_icon

2ST501T

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2ST501TDESCRIPTIONLow Collector Saturation VoltageHigh DC Current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersRelay & solenoid driversMotor controlsGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SD1007HR | ED1602D | DRC9143X | 2SC240 | KT208I | BDY12B | SFE245

Keywords - 2ST501T transistor datasheet

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