2ST501T Datasheet, Equivalent, Cross Reference Search
Type Designator: 2ST501T
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 330 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO-220C
2ST501T Transistor Equivalent Substitute - Cross-Reference Search
2ST501T Datasheet (PDF)
2st501t.pdf
2ST501THIGH VOLTAGE NPN POWER TRANSISTORn HIGH VOLTAGE SPECIAL DARLINGTON Figure 1: PackageSTRUCTUREn VERY RUGGED BIPOLAR TECHNOLOGYn HIGH OPERATION JUNCTIONTEMPERATUREn HIGH DC CURRENT GAINAPPLICATIONS3n DRIVER FOR SOLENOID, RELAY AND 2MOTOR 1 TO-220DESCRIPTIONThe 2ST501T is a High Voltage NPN silicontransistor in monolithic special Darlingtonconfiguration mou
2st501t.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2ST501TDESCRIPTIONLow Collector Saturation VoltageHigh DC Current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersRelay & solenoid driversMotor controlsGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
