3DD102D. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

3DD102D datasheet

..1. Size:182K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD102D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For aud

8.1. Size:150K china
3dd102.pdf pdf_icon

3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.

8.2. Size:209K inchange semiconductor
3dd102a.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD102A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform

8.3. Size:210K inchange semiconductor
3dd102c.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD102C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform

Otros transistores... 3DD100D , 3DD100E , 3DD101A , 3DD101B , 3DD101C , 3DD101D , 3DD101E , 3DD102A , 2N2907 , 3DD103E , 3DD104A , 3DD104B , 3DD104C , 3DD104D , 3DD104E , 3DD159A , 3DD159B .