All Transistors. 3DD102D Datasheet

 

3DD102D Datasheet and Replacement


   Type Designator: 3DD102D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO-3
 

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3DD102D Datasheet (PDF)

 ..1. Size:182K  inchange semiconductor
 3dd102d.pdf pdf_icon

3DD102D

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD102DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor aud

 8.1. Size:150K  china
 3dd102.pdf pdf_icon

3DD102D

3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.

 8.2. Size:209K  inchange semiconductor
 3dd102a.pdf pdf_icon

3DD102D

isc Silicon NPN Power Transistor 3DD102ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEODC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , DC Transform

 8.3. Size:210K  inchange semiconductor
 3dd102c.pdf pdf_icon

3DD102D

isc Silicon NPN Power Transistor 3DD102CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEODC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , DC Transform

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Datasheet: 3DD100D , 3DD100E , 3DD101A , 3DD101B , 3DD101C , 3DD101D , 3DD101E , 3DD102A , 2SC2482 , 3DD103E , 3DD104A , 3DD104B , 3DD104C , 3DD104D , 3DD104E , 3DD159A , 3DD159B .

History: 2N1026A | SST2907AHZG | BC857AQ | TIP35CW | 2SC4038 | 2N5650 | MT3S04AU

Keywords - 3DD102D transistor datasheet

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