2SB946A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistor 2SB946ADESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -5ACE(sat) CGood Linearity of hFELarge Collector Current ICComplement to Type 2SD1271AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Power Transistors2SB946Silicon PNP epitaxial planar typeFor power switchingUnit: mmComplementary to 2SD127110.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current IC0Full-pack package which can be installed to the heat sink withone

JMnic Product Specification Silicon PNP Power Transistors 2SB946 DESCRIPTION With TO-220Fa package Complement to type 2SD1271 Low saturation voltage Good linearity of hFE High current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UN

isc Silicon PNP Power Transistor 2SB946DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -5ACE(sat) CGood Linearity of hFELarge Collector Current ICComplement to Type 2SD1271Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)