2SB946A - Даташиты. Аналоги. Основные параметры

Power Transistors 2SB946 Silicon PNP epitaxial planar type For power switching Unit mm Complementary to 2SD1271 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0Full-pack package which can be installed to the heat sink with one

JMnic Product Specification Silicon PNP Power Transistors 2SB946 DESCRIPTION With TO-220Fa package Complement to type 2SD1271 Low saturation voltage Good linearity of hFE High current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UN

isc Silicon PNP Power Transistor 2SB946 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -5A CE(sat) C Good Linearity of h FE Large Collector Current I C Complement to Type 2SD1271 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )