2SD2328 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2328

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 180 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Capacitancia de salida (Cc): 270 pF

Ganancia de corriente contínua (hFE): 55

Encapsulados: TO-3P

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2SD2328 datasheet

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2SD2328

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2SD2328

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2328 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 3.0V(Max)@ I = 10A, I = 1A CE(sat) C B High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications A

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2SD2328

Ordering number EN4664 NPN Epitaxial Planar Silicon Transistor 2SD2324 Compact Motor Driver Applications Features Package Dimensions Low saturation voltage. unit mm Contains a diode between colletor and emitter. 2018B Contains a bias resistor between base and emitter. [2SD2324] Large current capacity. 0.4 Small-sized package facilitating the realization of 0.16

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2SD2328

Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V 1.2

MOSTRAR MÁS

Otros transistores... 2SC4850, 2SC5128, 2SC5696, 2SC5887, 2SCR586D3, 2SD1047E, 2SD133, 2SD1885C, 2SC5198, 2SD2397, 2SD2422, 2SD2490, 2SD2524, 2SD2593, 2SD2633, 2SD476N, 2SD711