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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2328DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 3.0V(Max)@ I = 10A, I = 1ACE(sat) C BHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsA

Ordering number:EN4664NPN Epitaxial Planar Silicon Transistor2SD2324Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains a diode between colletor and emitter.2018B Contains a bias resistor between base and emitter.[2SD2324] Large current capacity.0.4 Small-sized package facilitating the realization of 0.16

Transistor2SD2321Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 40 V1.2

Transistor2SD2321Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 40 V1.2

SMD Type TransistorsNPN Transistors2SD2324SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=800mA1 2 Collector Emitter Voltage VCEO=15V+0.050.95+0.1-0.1 0.1 -0.01-0.1C 1.9+0.11.BaseB2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20