2SD2328 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2328
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 270 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO-3P
2SD2328 Transistor Equivalent Substitute - Cross-Reference Search
2SD2328 Datasheet (PDF)
2sd2328.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2328DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 3.0V(Max)@ I = 10A, I = 1ACE(sat) C BHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsA
2sd2324.pdf
Ordering number:EN4664NPN Epitaxial Planar Silicon Transistor2SD2324Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains a diode between colletor and emitter.2018B Contains a bias resistor between base and emitter.[2SD2324] Large current capacity.0.4 Small-sized package facilitating the realization of 0.16
2sd2321 e.pdf
Transistor2SD2321Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 40 V1.2
2sd2321.pdf
Transistor2SD2321Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 40 V1.2
2sd2324.pdf
SMD Type TransistorsNPN Transistors2SD2324SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=800mA1 2 Collector Emitter Voltage VCEO=15V+0.050.95+0.1-0.1 0.1 -0.01-0.1C 1.9+0.11.BaseB2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 3CG1955 | 2SD2280 | BF263
