BU2508DW Todos los transistores

 

BU2508DW Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU2508DW
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Tensión emisor-base (Veb): 7.5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 80 pF
   Ganancia de corriente contínua (hfe): 4
   Paquete / Cubierta: TO247 SOT429

 Búsqueda de reemplazo de transistor bipolar BU2508DW

 

Principales características: BU2508DW

 ..1. Size:54K  philips
 bu2508dw.pdf pdf_icon

BU2508DW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collecto

 ..2. Size:215K  inchange semiconductor
 bu2508dw.pdf pdf_icon

BU2508DW

isc Silicon NPN Power Transistor BU2508DW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 7.1. Size:73K  philips
 bu2508dx.pdf pdf_icon

BU2508DW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive an

 7.2. Size:51K  philips
 bu2508d 1.pdf pdf_icon

BU2508DW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508D GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector

MOSTRAR MÁS

Otros transistores... 3DD15B , 3DD15D , 3DD4515 , BD134 , BDY96D , BU2507AX , BU2507DX , BU2508AW , MJE350 , BU2515AX , BU2520AW , BU2523AF , BU2523AX , BU2527AW , BU2532AL , BU2532AW , BU2708AF .

 

 
Back to Top

 


 
.