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BU2508DW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU2508DW
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Tensión emisor-base (Veb): 7.5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 80 pF
   Ganancia de corriente contínua (hfe): 4
   Paquete / Cubierta: TO247 SOT429
 

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BU2508DW Datasheet (PDF)

 ..1. Size:54K  philips
 bu2508dw.pdf pdf_icon

BU2508DW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DW GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.Features exceptional tolerance to base drive and collecto

 ..2. Size:215K  inchange semiconductor
 bu2508dw.pdf pdf_icon

BU2508DW

isc Silicon NPN Power Transistor BU2508DWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 7.1. Size:73K  philips
 bu2508dx.pdf pdf_icon

BU2508DW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an

 7.2. Size:51K  philips
 bu2508d 1.pdf pdf_icon

BU2508DW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508D GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.Features exceptional tolerance to base drive and collector

MOSTRAR MÁS

Otros transistores... 3DD15B , 3DD15D , 3DD4515 , BD134 , BDY96D , BU2507AX , BU2507DX , BU2508AW , MJE350 , BU2515AX , BU2520AW , BU2523AF , BU2523AX , BU2527AW , BU2532AL , BU2532AW , BU2708AF .

History: D7ST4015 | BUL742 | NSVBC817-16LT1G | D7ST4013 | NSVBC847BTT1G | BFQ18A | NSVBC847BDW1T2G

 

 
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