BU2508DW Specs and Replacement

Type Designator: BU2508DW

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 7.5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 80 pF

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: -

Package: TO247 SOT429

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BU2508DW datasheet

 ..1. Size:54K  philips

bu2508dw.pdf pdf_icon

BU2508DW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collecto... See More ⇒

 ..2. Size:215K  inchange semiconductor

bu2508dw.pdf pdf_icon

BU2508DW

isc Silicon NPN Power Transistor BU2508DW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒

 7.1. Size:73K  philips

bu2508dx.pdf pdf_icon

BU2508DW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive an... See More ⇒

 7.2. Size:51K  philips

bu2508d 1.pdf pdf_icon

BU2508DW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508D GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector... See More ⇒

Detailed specifications: 3DD15B, 3DD15D, 3DD4515, BD134, BDY96D, BU2507AX, BU2507DX, BU2508AW, MJE350, BU2515AX, BU2520AW, BU2523AF, BU2523AX, BU2527AW, BU2532AL, BU2532AW, BU2708AF

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