BU2527AW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BU2527AW
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 7.5 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Capacitancia de salida (Cc): 145 pF
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO247 SOT429

Búsqueda de reemplazo de transistor bipolar BU2527AW

BU2527AW Datasheet (PDF)

..1. Size:56K philips
bu2527aw 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATASYMBOL PARA

..2. Size:56K philips
bu2527aw.pdf

..3. Size:215K inchange semiconductor
bu2527aw.pdf

isc Silicon NPN Power Transistor BU2527AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

7.1. Size:55K philips
bu2527af 2.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATAS

7.2. Size:54K philips
bu2527a 1.pdf

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATASYMBOL P

7.3. Size:56K philips
bu2527ax 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATAS

7.4. Size:70K philips
bu2527af.pdf

7.5. Size:72K jmnic
bu2527ax.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527AX DESCRIPTION With TO-3PML package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25)

7.6. Size:76K jmnic
bu2527af.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO C

7.7. Size:217K inchange semiconductor
bu2527ax.pdf

isc Silicon NPN Power Transistor BU2527AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

7.8. Size:212K inchange semiconductor
bu2527a.pdf

isc Silicon NPN Power Transistor BU2527ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of largescreen colour television receivers up to 64 KHz.ABSOLUTE MAXIMUM RATINGS(T =25)

7.9. Size:212K inchange semiconductor
bu2527af.pdf

isc Silicon NPN Power Transistor BU2527AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: CT5652

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