BU2527AW - описание и поиск аналогов

 ..1. Size:56K  philips
 bu2527aw 1.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARA

 ..2. Size:56K  philips
 bu2527aw.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARA

 ..3. Size:215K  inchange semiconductor
 bu2527aw.pdf 

isc Silicon NPN Power Transistor BU2527AW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 7.1. Size:55K  philips
 bu2527af 2.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA S

 7.2. Size:54K  philips
 bu2527a 1.pdf 

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL P

 7.3. Size:56K  philips
 bu2527ax 1.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA S

 7.4. Size:70K  philips
 bu2527af.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA S

 7.5. Size:72K  jmnic
 bu2527ax.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527AX DESCRIPTION With TO-3PML package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 )

 7.6. Size:76K  jmnic
 bu2527af.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

 7.7. Size:217K  inchange semiconductor
 bu2527ax.pdf 

isc Silicon NPN Power Transistor BU2527AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 7.8. Size:212K  inchange semiconductor
 bu2527a.pdf 

isc Silicon NPN Power Transistor BU2527A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of large screen colour television receivers up to 64 KHz. ABSOLUTE MAXIMUM RATINGS(T =25 )

 7.9. Size:212K  inchange semiconductor
 bu2527af.pdf 

isc Silicon NPN Power Transistor BU2527AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U